Silicon carbide semiconductor device and method for producing the same

ABSTRACT

A gate electrode  18  formed on a silicon carbide substrate  11  includes a silicon lower layer  18 A and a silicide upper layer  18 B provided on the silicon lower layer  18 A, the silicide upper layer  18 B being made of a compound of a first metal and silicon. A source electrode  1   as  formed on the surface of the silicon carbide substrate  11  and in contact with an n type source region and a p +  region contains second metal silicide different from the first metal silicide. Side faces of the silicon lower layer  18 A are covered with an insulator.

TECHNICAL FIELD

The present invention relates to a semiconductor device having a siliconcarbide substrate, and a method of producing the same.

BACKGROUND ART

Silicon carbide (silicon carbide: SiC) is a semiconductor material witha high hardness which has a greater band gap than that of silicon (Si),and is applied in various semiconductor devices such as power devices,environment resistant devices, high-temperature operating devices, andhigh-frequency devices. Among others, applications to power devices suchas switching devices and rectifier devices are drawing attention. Apower device in which SiC is used has an advantage of e.g. a greatlyreduced power loss than that of an Si power device.

Among power devices in which SiC is used, representative switchingdevices are MOSFETs and MOSFETs. In such switching devices, based on avoltage which is applied to the gate electrode, it is possible to switchbetween an ON state where a drain current of several A (ampere) or moreflows and an OFF state where there is zero drain current. Moreover, withSiC, a high breakdown voltage of several hundred V or more can berealized in the OFF state.

In such power devices, a structure is often adopted in which a currentis allowed to flow in the front-rear direction of the substrate. Herein,the front face side is patterned by using a photoresist, whereas in mostcases, an ohmic contact is formed on the essentially the entire surfaceof the rear face side.

A switching device structure using SiC is proposed in Patent Document 1,for example. Hereinafter, with reference to the drawings, the structureof a vertical MOSFET (a transistor in which a source electrode and adrain electrode are formed on opposite faces of the substrate) will bedescribed.

FIG. 12A is a schematic cross-sectional view showing unit cells 1000 ofa vertical MOSFET in which SiC is used, and FIG. 12B is a plan viewshowing the layout of component elements in a portion of the verticalMOSFET. FIG. 12A corresponds to a cross-sectional view as seen in thedirection of arrows at line A-A′ in FIG. 12B. A vertical MOSFETtypically includes a plurality of unit cells. FIG. 12A and FIG. 12Bshows some unit cells 1000 among them.

As shown in FIG. 12A, a unit cell 1000 of a vertical MOSFET includes: asilicon carbide epitaxial layer 120 formed on a principal face of alow-resistance n type SiC substrate 101; a channel layer 106 formed onthe silicon carbide epitaxial layer 120; a gate electrode 108 providedon the channel layer 106 via a gate insulating film 107; a sourceelectrode 109 in contact with a surface 120 s of the silicon carbideepitaxial layer; and a drain electrode 110 provided on the rear face ofthe SiC substrate 101.

FIG. 12B shows an exemplary layout of the gate electrode 108 and thesource electrodes 109. This gate electrode 108 is made of anelectrically conductive film covering a principal face of the SiCsubstrate 101, and includes a plurality of openings. A source electrode109 is formed in the central portion of each of the plurality ofopenings. In FIG. 12B, a line surrounding each source electrode 109shows the contour of a well region 103 described later. Each unit cell1000 in the illustrated example includes one well region 103 and onesource electrode 109.

The silicon carbide epitaxial layer 120 includes well regions 103 havinga different conductivity type (which herein is the p type) from theconductivity type of the SiC substrate 101, and a drift region 102 whichis composed of a portion of the silicon carbide epitaxial layer 120where the well regions 103 are not formed. The drift region 102 is an n⁻type silicon carbide layer containing an n type impurity at a lowerconcentration than in the SiC substrate 101, for example.

Inside each well region 103, an n type source region 104 containing an ntype impurity at a high concentration and a p⁺ type contact region 105containing a p type impurity at a higher concentration than in the wellregion 103 are formed. The well regions 103, the source regions 104, andthe contact regions 105 are formed through a step of implanting animpurity into the silicon carbide epitaxial layer 120 and ahigh-temperature heat treatment (activation anneal) step of activatingthe impurity which has been implanted into the silicon carbide epitaxiallayer 120.

The source regions 104 and the drift region 102 are connected via thechannel layer 106. The channel layer 106 is a 4H-SiC layer which isformed on the silicon carbide epitaxial layer 102 through epitaxialgrowth, for example.

Each contact region 105 and each source region 104 constitute an ohmiccontact with a source electrode 109. Thus, the well region 103 iselectrically connected with the source electrode 109 via the contactregion 105.

The source electrodes 109 can be formed by, after forming anelectrically conductive material (Ni) layer on the source regions 104and the contact regions 105 of the silicon carbide epitaxial layer 120,performing a heat treatment at a high temperature. Generally speaking, aheat treatment at a high temperature of about 1000° C. is performed(Post Deposition Annealing technique) to obtain the source electrodes109. According to this method, a reaction layer is formed through thehigh-temperature heat treatment at the interfaces between theelectrically conductive material layer and the source regions 104 andthe contact regions 105, and therefore the resultant source electrodes109 have good ohmic characteristics with respect to these regions 104and 105. More specifically, it is presumable that, when Ni is adopted asthe material for the source electrode, Ni reacts with the Si within thesilicon carbide to form Ni silicide, and the C within the siliconcarbide is taken into the Ni silicide film, so that an impurity levelthat is ascribable to C is formed at the interface between Ni silicideand silicon carbide, whereby an ohmic contact is formed.

The gate insulating film 107 is a thermal oxide film (SiO₂ film) whichis formed by subjecting the surface of the channel layer 106 to thermaloxidation, for example. The gate electrode 108 is formed by using anelectrically conductive polysilicon, for example. The gate electrode 108is common to the respective unit cells, and is connected to an externalcircuit via one gate electrode pad (not shown). A gate signal is to besupplied to the gate electrode 108 through this gate electrode pad.

The gate electrode 108 is covered by an interlayer insulating film 111.Openings 113 are formed in the interlayer insulating film 111, such thatthe source electrodes 109 of the respective unit cells are connected inparallel to an upper electrode layer (e.g. an Al electrode) 112 throughthe openings 113.

Ohmic characteristics are also required of the drain electrode 110.Again, Ni is adopted for the drain electrode 110; after forming Ni onthe rear face of the silicon carbide substrate 101, a heat treatment ata high temperature of about 1000° C. is performed to obtain the drainelectrode 110. On the surface (corresponding to the lower side of thedrain electrode 110 in FIG. 12A) of the drain electrode, a rear faceelectrode 130 for assembly into a package is further formed. The rearface electrode 130 has a multilayer structure in most cases.

[Patent Document 1] Japanese National Phase PCT Laid-Open PublicationNo. 2004-519842

DISCLOSURE OF INVENTION Problems to be Solved by the Invention

In a MOSFET in which an SiC substrate is used, the chip area can be madesmaller than in the case where Si is used, but the operating frequencywill be higher.

By using an SiC substrate, the inventors produced a vertical MOSFET inwhich phosphorus-doped polysilicon was employed as the gate electrode108, and observed that a delay of switching occurred at a chip end awayfrom the gate electrode pad due to the resistance of the gate electrode.This is because, although use of SiC allows the film thickness of thedrift layer formed on the SiC substrate to be thin due to its highinsulation breakdown voltage, it results in an increased capacitance ofthe drift layer. When the capacitance of the drift layer is large, underthe same sheet resistance value, there is a large influence on delay ascompared to Si-MOS.

On the other hand, when the gate electrode was formed from a metal suchas aluminum in order to reduce the resistance of the gate electrode,switching delay of the gate will be eliminated, but a deterioration inthe reliability of the gate insulating film was observed, caused by themetal directly coming into contact with the gate insulating film.

The present invention has been made in view of the above circumstances,and an objective thereof is to reduce the resistance of a gate electrodewithout deteriorating the reliability of a gate insulating film.

Means for Solving the Problems

A method of producing a silicon carbide semiconductor device accordingto the present invention comprises the steps of: providing a siliconcarbide substrate having a silicon carbide epitaxial layer formed on asurface thereof; forming a source region in the silicon carbideepitaxial layer; forming a gate insulating film on the silicon carbideepitaxial layer; forming a silicon gate electrode on the gate insulatingfilm; covering side faces of the silicon gate electrode with aninsulator; depositing a first metal which is in contact with an upperface of the silicon gate electrode; allowing a portion of the silicongate electrode to react with the first metal to form a gate electrodehaving an upper layer of first metal silicide and a lower layer ofsilicon; removing an unreacted portion of the first metal having failedto react with the silicon gate electrode; forming an interlayerinsulating film having an opening above the source region; depositing onthe interlayer insulating film a second metal which is in contact with aportion of the source region via the opening; and allowing a portion ofthe source region to react with the second metal to form a layer ofsecond metal silicide above the source region.

In a preferred embodiment, the step of covering the side faces of thesilicon gate electrode with an insulator comprises: depositing aninsulating film; and etching back the insulating film to form side wallspacers on the side faces of the silicon gate electrode, wherein, whenthe portion of the silicon gate electrode and the first metal areallowed to react, the portion of the first metal is in contact with thesource region.

In a preferred embodiment, when the portion of the silicon gateelectrode and the first metal are allowed to react, the first metal isheated at a temperature which allows silicidation to occur between thefirst metal and silicon but which does not allow silicidation to occurbetween the first metal and silicon carbide.

In a preferred embodiment, the first metal is Ti; and the temperature isin a range from 650° C. to 850° C.

In a preferred embodiment, the step of covering the side faces of thesilicon gate electrode with an insulator comprises the steps of:depositing an insulating film; and exposing at least a portion of theupper face of the silicon gate electrode by removing at least part of aportion of the insulating film which is in contact with the upper faceof the silicon gate electrode.

In a preferred embodiment, when the portion of the silicon gateelectrode and the first metal are allowed to react, the first insulatingfilm is present between the first metal and the source region.

In a preferred embodiment, the second metal contains Ni.

In a preferred embodiment, the first metal has a thickness which issmaller than ½ of a thickness of the silicon gate electrode.

A silicon carbide semiconductor device according to the presentinvention comprises: a silicon carbide substrate having a siliconcarbide epitaxial layer on a surface thereof, a source region beingformed in the silicon carbide epitaxial layer; a gate insulating filmformed on the silicon carbide epitaxial layer; a gate electrode formedon the gate insulating film, the gate electrode having an upper layer offirst metal silicide containing a first metal and a lower layer ofsilicon; and a layer formed on the source region, the layer being madeof second metal silicide containing a second metal which is differentfrom the first metal, wherein, side faces of the lower layer of siliconof the gate electrode are covered with an insulator.

In a preferred embodiment, the first metal silicide is a compound of Tiand Si.

In a preferred embodiment, the second metal silicide is a compound withSi containing Ni.

EFFECTS OF THE INVENTION

With a method of producing a silicon carbide semiconductor deviceaccording to the present invention, the material which is in contactwith a gate insulating film may be polysilicon or amorphous silicon, andthe reliability of the gate insulating film is ensured. Since an upperportion of the gate electrode is silicidized, its resistance has a valuewhich is about 1/10 that of polysilicon. Even if the film thickness ofthe SiC drift layer is made so thin that it has an increased driftcapacitance, the delay in the switching operation associated with thegate resistance can still be suppressed.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 A cross-sectional view of a silicon carbide semiconductor device10 according to Embodiment 1 of the present invention.

FIG. 2 (a) to (c) are cross-sectional views showing production steps ofa semiconductor device according to Embodiment 2 of the presentinvention.

FIG. 3 (a) to (c) are cross-sectional views showing production steps ofthe semiconductor device according to Embodiment 2.

FIG. 4 (a) to (c) are cross-sectional views showing production steps ofthe semiconductor device according to Embodiment 2.

FIG. 5 (a) to (c) are cross-sectional views showing production steps ofthe semiconductor device according to Embodiment 2.

FIG. 6 (a) to (c) are cross-sectional views showing production steps ofthe semiconductor device according to Embodiment 2.

FIG. 7 (a) to (c) are cross-sectional views showing production steps ofthe semiconductor device according to Embodiment 2.

FIG. 8 (a) and (b) are cross-sectional views showing production steps ofthe semiconductor device according to Embodiment 2.

FIG. 9 (a) to (c) are cross-sectional views showing production steps ofa semiconductor device according to Embodiment 3.

FIG. 10 (a) to (c) are cross-sectional views showing production steps ofthe semiconductor device according to Embodiment 3.

FIG. 11 A graph showing a heat treatment temperature dependence of theamount of Ti silicidation reaction.

FIG. 12A A cross-sectional view showing a conventional silicon carbidesemiconductor device 1000.

FIG. 12B A plan view showing an exemplary layout of the conventionalsilicon carbide semiconductor device 1000.

FIG. 13 A schematic cross-sectional view of a gate electrode, showing areaction of Ni silicide.

DESCRIPTION OF REFERENCE NUMERALS

-   -   10 semiconductor device (MOSFET)    -   11 silicon carbide substrate    -   12 semiconductor layer    -   13 p type well region    -   14 n type source region    -   15 p⁺ type contact implanted region    -   16 channel layer    -   17 gate insulating film    -   18 gate electrode    -   18A silicon lower layer of gate electrode    -   18B silicide upper layer of gate electrode    -   19 interlayer insulating film    -   21, 22 mask    -   23, 34 mask    -   30 insulating film    -   31 side wall spacer    -   32 first metal    -   41, 42 exposed face    -   1 as source electrode    -   1 ag electrode in ohmic contact with gate electrode    -   1 bs source pad (upper wiring electrode)    -   1 bg gate pad    -   1 c passivation layer    -   1 f metal electrode layer

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment 1

Hereinafter, with reference to FIG. 1, embodiments of the siliconcarbide semiconductor device according to the present invention will bedescribed.

FIG. 1 is a cross-sectional view showing an example of a MOSFET 10having a silicon carbide substrate. The planar layout of the MOSFET 10is substantially similar to the planar layout shown in FIG. 12B.

A silicon carbide substrate 11 shown in FIG. 1 has a principal facewhich is tilted by θ degrees (0≦θ≦10 degrees) from the 4H-SiC (0001)plane, for example, such that the substrate surface (principal face) isan Si-plane and the substrate rear face is a C-plane. In the presentembodiment, the Si-plane on the front face side of the silicon carbidesubstrate 11 has a smaller surface roughness than does the C-plane onthe rear face side. The silicon carbide substrate 11 has an impurityconcentration of 1×10¹⁸ cm⁻³ or more. A semiconductor layer 12 is an ntype 4H-SiC (having an impurity concentration of about 1×10¹⁴ to 1×10¹⁷cm⁻³ and a thickness of 5 microns or more) layer which is epitaxiallygrown on the silicon carbide substrate 11. A buffer 12 b may be insertedbetween the semiconductor layer 12 and the silicon carbide substrate 11.

A p type well region 13 is a region of the semiconductor layer 12 wherean aluminum is implanted, and has a depth of about 600 nm and an averageconcentration of about 1×10¹⁸ cm⁻³, for example. An n⁺ type sourceregion 14 is a region of the semiconductor layer 12 where nitrogen isimplanted, and has a depth about 300 nm and an average concentration ofabout 1×10¹⁹ cm⁻³. A p⁺ type contact implanted region 15 is a regionwhere aluminum is implanted at a high concentration, and has a depth ofabout 400 nm and an average concentration of about 5×10¹⁹ cm⁻³. Achannel layer 16, which is made of an n type silicon carbide, is anepitaxially-grown layer formed on the semiconductor layer 12, and has afilm thickness of about 200 nm and an average concentration of about1×10¹⁷ cm⁻³, for example. A gate insulating film 17 is formed on thechannel layer 16, and has a thickness of about 70 nm, for example.

A gate electrode 18 is formed on the gate insulating film 17, and has asilicon lower layer 18A and a silicide upper layer 18B. The siliconlower layer 18A is made of silicon such as polysilicon, and has athickness in the range from 100 nm to 1 μm, for example. The silicideupper layer 18B is made of a metal silicide, which is a compound of ahigh-melting point metal (e.g. Ti) and silicon, and has a thickness inthe range from 50 nm to 500 nm, for example. By adopting such aconstruction, a sheet resistance of 3Ω/□ or less can be obtained, asopposed to a sheet resistance of about 30Ω/□ in the case where the gateelectrode is made of polysilicon alone.

As described above, a portion of the gate electrode 18 that is incontact with the gate insulating film 17 is a silicon layer, such thatno metal silicide is in contact with the gate insulating film 17,whereby the reliability of the gate insulating film 17 is ensured.Moreover, since the upper portion of the gate electrode 18 issilicidized, the resistance value of the gate electrode 18 can begreatly reduced as compared to a gate electrode which is entirely madeof polysilicon. For example, in the case where the silicon lower layer18A is made of polysilicon with a thickness of 300 nm and the silicideupper layer 18B is made of TiSi₂ with a thickness of 200 nm, theresistance value can be about 1/10 of that of a polysilicon gateelectrode having a thickness of 500 nm. Therefore, even if the SiC driftlayer is made so thin that it has an increased drift capacitance, thedelay in the switching operation associated with the gate resistancevalue can still be suppressed.

Without being limited to TiSi₂, the silicide upper layer 18B may be madeof a metal silicide containing other metals such as Ni, Pt, or W.However, according to an experiment by the inventors, when formingsilicide from Ni, the reaction will have a uniform progress in the depthdirection if NiSi is formed, but the reaction will have a non-uniformprogress in the depth direction if NiSi₂ is formed. Consequently, asshown in FIG. 13, the interface between the silicon layer 18A and thesilicide upper layer 18B will form upside-down triangle shapes towardthe gate insulating film 17, and some of their apices may reach the gateinsulating film 17. In this case, the gate insulating film 17 will havea reliability problem, and also the threshold value of the MOStransistor will be non-uniform due to different work functions. On theother hand, TiSi₂ is stable in a relatively broad temperature range, andtherefore a uniform silicide film can be formed in the depth direction,thus being more advantageous than other metals.

An interlayer insulating film 19 mainly insulates the gate electrode 18from an upper wiring electrode 1 bs described later. It has a filmthickness of about 1 micron.

A source electrode 1 as is an electrode which is in ohmic contact withthe source region 14. The source electrode 1 as is formed by effecting asilicidation reaction between Ni and SiC, for example. Note that thesilicide may be formed by using a metal other than Ni instead of Ni, orusing another metal in addition to Ni. It is desirable that the sourceelectrode 1 as is also in ohmic contact with the contact implantedregion 15.

An electrode 1 ag is an electrode which is in ohmic contact with thegate electrode 18, and is formed by silicidizing Ni, similarly to thesource electrode 1 as. However, the electrode 1 ag does not need to beidentical with the source electrode 1 as.

The upper wiring electrode 1 bs connects, in parallel, a plurality ofsource electrodes 1 as which are included in one vertical MOSFET. Theupper wiring electrode 1 bs is made of aluminum, for example, and has athickness of about 3 microns. Similarly, a gate pad electrode 1 bg isformed so as to be in contact with the electrode 1 ag. The gate padelectrode 1 bg may typically be made of the same material as the upperwiring electrode 1 bs. A passivation film 1 c is located in theperiphery of the semiconductor device 10, and fills between the upperwiring electrode 1 bs and the gate pad electrode 1 bg, for example.

A rear-face ohmic electrode layer 1 f is formed on the rear face of thesilicon carbide substrate 11. The rear-face ohmic electrode layer 1 f inthe present embodiment contains titanium, and is silicidized at the sidewhere it is in contact with the silicon carbide substrate 11. Therear-face ohmic electrode layer 1 f has a thickness of about 150 nm, forexample, and its surface (the side farther away from the silicon carbidesubstrate) is preferably nitrided. One example of the rear-face ohmicelectrode layer 1 f is a Ti/Ni/Ag multilayer electrode, for example.

Embodiment 2

Next, with reference to FIG. 2 to FIG. 8, an embodiment of a method ofproducing the silicon carbide semiconductor device according to thepresent invention will be described.

First, as shown in FIG. 2( a), a silicon carbide substrate 11 having asemiconductor layer 12 on its surface is provided. A buffer layer 12 b(an n⁺ type semiconductor layer, which herein is a silicon carbidelayer) having a thickness of about 0.5 to 4 microns may be formed at theinterface between the silicon carbide substrate 11 and the semiconductorlayer 12. The concentration of the buffer layer is set to about 1×10¹⁶to 1×10¹⁹ cm⁻³.

As shown in FIG. 2( b), after forming a mask 21 on the surface of thesemiconductor layer 12, aluminum is implanted in regions of thesemiconductor layer 12 that are not covered by the mask 21, therebyforming p type well regions 13. Openings defining the shapes andpositions of the p type well regions 13 are formed in the mask 21. Afterthe implantation step, the mask 21 is removed.

After forming a mask 22 on the semiconductor layer 12 as shown in FIG.2( c), nitrogen is implanted in regions of the semiconductor layer 12that are not covered by the mask 22, thereby forming n⁺ type sourceregions 14. Openings defining the shapes and positions of the sourceregions 14 are formed in the mask 22. After the implantation step, themask 22 is removed.

As shown in FIG. 3( a), a mask 23 is formed on the semiconductor layer12, and aluminum is implanted in regions of the semiconductor layer 12that are not covered by the mask 23, thereby forming p⁺ type contactimplanted regions 15. Each p⁺ type contact implanted region 15 islocated in a central portion of a source region 14, and is formed so asto reach the p type well 13 from the surface of the semiconductor layer12. Openings defining the shapes and positions of the p⁺ type contactimplanted regions 15 are formed in the mask 23. After the implantationstep, the mask 23 is removed.

Next, after depositing a carbon type thin film (not shown) on thesemiconductor layer 12, a heating is conducted in an inert gas ambientfor about 30 minutes, at a temperature of about 1700° C. Through thisheat treatment, the impurities which have been implanted in thesemiconductor layer 12 are activated. Thereafter, by removing the carbontype thin film, as shown in FIG. 3( b), the silicon carbide substrate 11is obtained, whose semiconductor layer 12 includes the p type wellregions 13, the n⁺ type source regions 14, and the p⁺ type contactimplanted regions 15 formed therein as impurity implanted regions.

Next, after forming a channel layer 16 made of silicon carbide on thesemiconductor layer 12 having the impurity implanted regions, as shownin FIG. 3( c), portions of the channel layer 16 are dry-etched so thateach contact implanted region 15 and a portion of each source region 14are exposed. The planar layout of the channel layer 16 is similar to theplanar layout of the gate electrode 108 shown in FIG. 12B, such that thechannel layer 16 includes a plurality of openings each located above asource region 14.

By heating the semiconductor layer 12 having the channel layer 16 in anoxygen-containing ambient at about 1200° C. to oxidize the semiconductorlayer 12, a gate insulating film 17 is formed on the channel layer 16 asshown in FIG. 4( a). After this oxidation treatment, a heat treatmentmay be performed in a gas ambient containing nitrogen atoms, therebyperforming a nitridation treatment for the gate insulating film 17.Instead of being formed through a thermal oxidation step, the gateinsulating film 17 may be formed by depositing an insulating layer suchas an SiO₂ layer, for example. Moreover, a gate insulating film 17 whichhas an insulating layer on a thermal oxidation layer may be formed bysequentially performing a thermal oxidation step and an insulating filmdepositing step.

Next, a silicon film is deposited on the gate insulating film 17. Forexample, n⁺ type polysilicon (thickness about 500 nm) which is dopedwith phosphine is deposited. Thereafter, through lithography and etchingsteps, this polysilicon is patterned into a gate electrode shape asshown in FIG. 4( b), thus forming a silicon gate electrode 180.

Next, as shown in FIG. 4( c), an insulating film 30 is deposited on thefront face side of the silicon carbide substrate 11, so as to cover thesilicon gate electrode 180. Although the insulating film 30 in thepresent embodiment is made of an SiO₂ film (PSG film) containingphosphorus, it may be made of other insulating materials. The insulatingfilm 30 is suitably formed by a thin film deposition technique having ahigh ability to cover level differences (e.g. CVD technique), and theupper face and the side faces of the silicon gate electrode 180 arecovered by the insulating film 30. Within the insulating film 30,portions adjoining the side faces of the silicon gate electrode 180 havean effective thickness (size along the direction perpendicular to thesubstrate surface) which is greater than those of the other portions.The thickness of the insulating film 30 may preferably be set to a rangefrom 500 nm to 2 μm.

Next, as shown in FIG. 5( a) and FIG. 5( b), the insulating film 30 isetched back by anisotropic dry etching technique, whereby side wallspacers 31 are formed on the side faces of the silicon gate electrode180, the side wall spacers 31 being composed of portions of theinsulating film 30. The arrows in FIG. 5( a) show the direction of anetching which progresses anisotropically. Since this etch back step isperformed without using a photomask, no mask alignment is required inthe photolithography step, and the side wall spacers 31 will be formedin a self-aligning manner with respect to the side faces of the silicongate electrode 180. The thickness (the size along a direction which isparallel to the substrate principal face) of the side wall spacers 31shown in FIG. 5( b) is substantially equal to the thickness of theinsulating film 30 when it has just been deposited. By adjusting thedeposition rate and the deposition time, the thickness of the insulatingfilm 30 can be controlled with a high precision, and therefore thethickness of the side wall spacers 31 can also be controlled with a highprecision.

Although the figures are illustrated so that the gate insulating film 17remains above the source regions 14 even after the etch back of theinsulating film 30 is finished, it would also be possible to remove thegate insulating film 17 from the source regions 14. When the gateinsulating film 17 and the insulating film 30 are made of SiO₂, it isdifficult to selectively etch the insulating film 30; therefore, whenthe etch back of the insulating film 30 is completed, the portions ofthe gate insulating film 17 that are located above the source regions 14will also have been removed, thus leaving portions of the source regions14 exposed. If any insulating film 30 remains on the upper face of thesilicon gate electrode 180, silicidation cannot be achieved, andtherefore it is preferable to perform the etch back of the insulatingfilm 30 under overetching conditions. Under overetching conditions, itis easy to completely remove the gate insulating film 17 above thesource regions 14.

Next, as shown in FIG. 5( c), Ti is deposited as a first metal 32. Forexample, the thickness of Ti is set within the range from 50 nm to 200nm, e.g. 100 nm. Thereafter, by performing a heat treatment at atemperature from 650° C. to 850° C., as shown in FIG. 6( a), an upperportion of the silicon gate electrode 180 is silicidized, whereby asilicide upper layer 18B of metal silicide is formed. On the other hand,a lower portion of the silicon gate electrode 180 is not silicidized,but remains as silicon. In the case where the silicon gate electrode 180is made of amorphous silicon, the amorphous silicon will crystallize andchange into polysilicon because of the heat treatment for silicidation.The gate electrode 18 having the silicon lower layer 18A of polysiliconand the silicide upper layer 18B of metal silicide is formed in thismanner.

What is important in the present embodiment is to select as the firstmetal 32 a metal which will easily undergo a silicidation reaction withsilicon but which is unlikely to react with SiC. Since the side wallspacers 31 are formed in a self-aligning manner with respect to the sidefaces of the silicon gate electrode 180, the surface of the sourceregions 14 is not necessarily covered by the insulating film 30 when thefirst metal 32 is deposited. Therefore, the first metal 32 may be incontact not only with the upper face of the silicon gate electrode 180but also with the surface of the semiconductor layer 12, which is madeof SiC. When performing a heat treatment for silicidation, if the firstmetal 32 is silicidized above the source regions 14, TiSi₂ will beformed in the source regions 14. However, in the present embodiment,TiSi₂ does not form in the source regions 14, but another metal silicideis subsequently formed, thereby improving the contact characteristics.

FIG. 11 is a graph showing the heat treatment temperature dependence ofa ratio of the film thickness of Ti silicide to the film thickness of Tiimmediately after deposition (as-deposited). The vertical axis of thegraph represents a ratio obtained by dividing the silicide filmthickness by the film thickness of Ti as deposited (ratio of silicidefilm thickness/Ti film thickness as deposited), whereas the horizontalaxis represents the heat treatment temperature. The graph of FIG. 11shows two kinds of data, i.e., that of the case where the underlayer ofTi is polysilicon and that of the case where it is SiC. In the casewhere the underlayer of Ti is polysilicon, the ratio is 1 when the heattreatment temperature is 650° C., and this ratio is further increased atheat treatment temperatures higher than 650° C. This means that asilicidation reaction with polysilicon is occurring even when the heattreatment temperature is 650° C., which is relatively low. Thus, it canbe seen that silicon easily undergoes a silicidation reaction with Ti attemperature of 650° C. or above.

On the other hand, in the case where the underlayer is SiC, the ratio ofsilicide film thickness/Ti film thickness as deposited is about 0 at aheat treatment temperature of 850° C. This means that no silicidationreaction is occurring at 850° C., and the reaction begins to occurbeyond 850° C. Thus, it can be seen that SiC does not react with Ti at850° C. or below.

In the present embodiment, based on the above experimental results, onlythe upper portion of the gate electrode 18 can be selectivelysilicidized by adjusting the heat treatment temperature for silicidationto be in the range from 650° C. to 850° C.

On silicon, TiSi₂ will be formed to a thickness which is twice as largeas the thickness of the Ti film that has been deposited. Therefore, inorder to prevent silicide from coming into contact with the gateinsulating film 17, it is desirable that the film thickness of thedeposited Ti is thinner than ½ of the thickness of the silicon gateelectrode.

Next, as shown in FIG. 6( b), the unreacted first metal 32 which remainson the source regions 14 is removed. Thereafter, as shown in FIG. 6( c),an interlayer insulating film 19 is deposited. As the interlayerinsulating film 19, an SiO₂ film (PSG film) containing phosphorus can beselected, but other insulating films can also be selected.

Next, as shown in FIG. 7( a), a plurality of contact holes are formed inthe interlayer insulating film 19 and the gate insulating film 17, thusexposing the contact implanted regions 15 and portions of the sourceregions 14 in the semiconductor layer 12. As the contact holes areformed, the contact implanted regions 15 and portions of the sourceregions 14 are exposed, and also portions of the silicide upper layer18B are exposed. Thus, as shown in FIG. 7( a), exposed faces 41 of thesemiconductor layer 12 and an exposed face 42 of the silicide upperlayer are formed.

Next, a second metal (not shown) which is in contact with at least aportion of each exposed face 41 is deposited in the interlayerinsulating film 19. The second metal may be about 50 to 200 nm of Ni,for example, and a metal material is to be selected which silicidizeswith silicon carbide to form a low-resistance ohmic contact.

By performing a heat treatment at about 800 to 1100° C. after depositionof the second metal, the interface between the second metal and thesemiconductor layer 12 is silicidized. Thus, source electrodes 1 asshown in FIG. 7( b) are formed. At this time, on the exposed face 42, anelectrode 1 ag which is in ohmic contact with the gate electrode 18(silicide upper layer 18B) is also simultaneously formed, as shown inFIG. 7( b). Since the silicide upper layer 18B completely reacted duringthe previous heat treatment for silicidation, it does not change throughthis step.

SiC has a broad band gap, and thus it is relatively difficult for SiC toform an ohmic contact. In particular, contact with a p⁺ layer is verydifficult in the case where Ti is used. On the other hand, Ni canrelatively easily form ohmic contacts with a p⁺ layer and an n⁺ layer.Therefore, as the silicide film for forming ohmic contacts, it isdesirable to form a silicide film which is different from the silicideof the gate electrode 18.

Thereafter, as shown in FIG. 7( c), a metal (e.g. aluminum) to become anupper wiring electrode is deposited on the front face side (the sidehaving the interlayer insulating film 19) of the substrate 11, and ispatterned. Thus, a source pad 1 bs and a gate pad 1 bg are formed. Next,as shown in FIG. 8( a), a passivation film 1 c is deposited on the sidehaving the source pad 1 bs and the gate pad 1 bg, and thereafter thepassivation film 1 c is locally etched so as to cover each pad 1 bs, 1bg while exposing a portion of the pad surface.

Finally, as shown in FIG. 8( b), a metal electrode layer 1 f isdeposited on the rear face side of the substrate 11, and thesemiconductor device 10 is completed. In the example shown in FIG. 8(b), a multilayer structure of a Ti layer 1 fa, an Ni layer 1 fb, and anAg layer 1 fc is used as the metal electrode layer 1 f. The layerstructure of the metal electrode layer 1 f is to be appropriatelyselected according to the packaging of the semiconductor device 10.Other examples of the metal electrode layer 1 f may be a Ti/Ni/Au layer,a Cr/NiCr/Ni/Ag layer, or of course any other combination.

Embodiment 3

Hereinafter, with reference to FIG. 9 and FIG. 10, another embodiment ofthe method of producing the silicon carbide semiconductor deviceaccording to the present invention will be described.

The production steps according to the present embodiment are identicalto the steps in Embodiment 2 as described with reference to FIG. 1 toFIG. 4( c), and the descriptions thereof are omitted.

After obtaining the structure shown in FIG. 9( a) through theabove-described steps, in the present embodiment, a mask 34 havingopenings for exposing only the upper face of the silicon gate electrode180 is formed, as shown in FIG. 9( b). The mask 34 is typically a resistmask, and is suitably formed through a photolithography step. Properpositioning of the mask (mask alignment) is necessary so that theopenings of the mask 34 are located in the upper face of the silicongate electrode 180. Since it is necessary that the openings of the mask34 will surely fit within the upper face of the silicon gate electrode180 even if a misalignment occurs, the diameter of each opening of themask 34 is designed to be smaller than the width of the silicon gateelectrode 180.

Next, as shown in FIG. 9( c), portions of the insulating film 30 thatare not covered by the mask 34 are removed, thereby exposing the upperface of the silicon gate electrode 180. At this time, an insulatinglayer 310 is formed in the portions of the mask 34 that are covered bythe insulating film 30. The insulating layer 310 covers not only theside faces of the silicon gate electrode 180 but also the upper faces ofthe source regions 14.

Next, the mask 34 is removed as shown in FIG. 10( a). Thereafter, Tiwith a thickness of 50 to 200 nm (not shown) is deposited as a firstmetal. Herein, after depositing Ti to a thickness of 100 nm, a heattreatment is performed at a temperature from 650° C. to 850° C., therebyforming a silicon lower layer 18A of polysilicon and a silicide upperlayer 18B of silicide as shown in FIG. 10( b).

In the present embodiment, the insulating layer 310 not only covers theside faces of the silicon gate electrode 180 but also the upper faces ofthe source regions 14, so that the first metal 32 is not in contact withthe source regions 14. Therefore, it is possible to effect silicidationof the gate electrode under conditions where the first metal 32 and thesilicon carbide will react to form silicide. As a result, when Ti isused as the first metal 32, for example, the temperature of the heattreatment for silicidation may be set to a value of 850° C. or above.

After silicidation, the unreacted first metal 32 remains on theinsulating layer 310 as shown in FIG. 10( b). After removing theunreacted first metal 32, an interlayer insulating film 19 shown in FIG.10( c) is formed. Herein, an SiO₂ film (PSG film) containing phosphorusmay be selected, but other insulating films can also be selected.

The subsequent steps are identical to the steps described in Embodiment1 with reference to FIG. 7( a) to FIG. 8( b), and the descriptionsthereof are omitted.

Note that the semiconductor device construction according to the presentembodiment is not limited to the above construction. Although thechannel layer 16 of silicon carbide is formed on the semiconductor layer12 in the above embodiments, the channel layer 16 may be omitted. Insuch a structure lacking the channel layer 16, it is possible to form achannel by inverting the conductivity type of the drift region portionunder the gate electrode with a voltage applied to the gate electrode18.

Although the present embodiment has been illustrated based on a doubleimplanted MOSFET (DIMOSFET), it may be other device forms, such as atrench MOSFET or an IGBT.

INDUSTRIAL APPLICABILITY

According to the present invention, metal silicide is not in contactwith a gate insulating film, so that the sheet resistance of a gateelectrode can be reduced. As a result, the delay due to gate resistancecan be decreased. Thus, applications are possible for semiconductordevices having a gate electrode on a silicon carbide substrate, e.g., anMOSFET.

1. A method of producing a silicon carbide semiconductor device,comprising the steps of: providing a silicon carbide substrate having asilicon carbide epitaxial layer formed on a surface thereof; forming asource region in the silicon carbide epitaxial layer; forming a gateinsulating film on the silicon carbide epitaxial layer; forming asilicon gate electrode on the gate insulating film; covering side facesof the silicon gate electrode with an insulator; depositing a firstmetal which is in contact with an upper face of the silicon gateelectrode; allowing a portion of the silicon gate electrode to reactwith the first metal to form a gate electrode having an upper layer offirst metal silicide and a lower layer of silicon; removing an unreactedportion of the first metal having failed to react with the silicon gateelectrode; forming an interlayer insulating film having an opening abovethe source region; depositing on the interlayer insulating film a secondmetal which is in contact with a portion of the source region via theopening; and allowing a portion of the source region to react with thesecond metal to form a layer of second metal silicide above the sourceregion, wherein, the step of covering the side faces of the silicon gateelectrode with an insulator comprises the steps of: depositing aninsulating film; and etching back the insulating film to form side wallspacers on the side faces of the silicon gate electrode, and, when theportion of the silicon gate electrode and the first metal are allowed toreact, the portion of the first metal is in contact with the sourceregion.
 2. (canceled)
 3. The method of producing a silicon carbidesemiconductor device of claim 1, wherein, when the portion of thesilicon gate electrode and the first metal are allowed to react, thefirst metal is heated at a temperature which allows silicidation tooccur between the first metal and silicon but which does not allowsilicidation to occur between the first metal and silicon carbide. 4.The method of producing a silicon carbide semiconductor device of claim3, wherein, the first metal is Ti; and the temperature is in a rangefrom 650° C. to 850° C.
 5. The method of producing a silicon carbidesemiconductor device of claim 1, wherein, the step of covering the sidefaces of the silicon gate electrode with an insulator comprises thesteps of: depositing an insulating film; and exposing at least a portionof the upper face of the silicon gate electrode by removing at leastpart of a portion of the insulating film which is in contact with theupper face of the silicon gate electrode.
 6. The method of producing asilicon carbide semiconductor device of claim 5, wherein, when theportion of the silicon gate electrode and the first metal are allowed toreact, the first insulating film is present between the first metal andthe source region.
 7. The method of producing a silicon carbidesemiconductor device of claim 1, wherein the second metal contains Ni.8. The method of producing a silicon carbide semiconductor device ofclaim 1, wherein the first metal has a thickness which is smaller than ½of a thickness of the silicon gate electrode. 9.-11. (canceled)